发明名称 |
METHOD FOR FORMING OF GATE IN MICROWAVE TRANSISTOR |
摘要 |
The method of forming a submicron gate of microwave transistors consists in implementation of a groove in working n-layer of a semiconductor plate that has dimensions, which determine by pinch-off voltage and saturation current. Then the groove is metallized; and the surface of plates is passivated. The gate groove is made using probe nanolithography method.
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申请公布号 |
UA23771(U) |
申请公布日期 |
2007.06.11 |
申请号 |
UA20060014036 |
申请日期 |
2006.12.29 |
申请人 |
"NAUKA", SCIENTIFIC AND PRODUCTION CONCERN, CLOSED JOINT-STOCK COMPANY |
发明人 |
LARKIN SERHII YURIIOVYCH;KOSTIUKEVYCH SERHII OLEKSANDROVYCH;VORONKO ANDRII OLEKSANDROVYCH |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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