SEMICONDUCTOR DEVICE HAVING RECESSED CHANNEL REGION AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to overcome the problems due to the short channel effect caused by the increase of the degree of integration by securing the width of a channel enough using a recessed channel region formed across a gate electrode. A semiconductor device includes a semiconductor substrate, a gate pattern and a gate insulating layer. The substrate(100) includes an active region with a groove(99). The gate pattern is formed across the active region to fill partially the groove. The gate insulating layer(140) is interposed between the gate pattern and the active region. A bottom surface of the groove is lower than an upper surface of the active region. The groove crosses the gate pattern.