| 摘要 |
A high sensitivity CCD(Charge Coupled Device) image sensor and its manufacturing method are provided to obtain a high sensitivity image by increasing a signal charge storing space using an epitaxial layer between a photodiode and a P well. A high sensitivity CCD image sensor has an enhanced pixel structure. The pixel structure is composed of a first P well(2) for dividing an N type epitaxial wafer into an N type substrate(1) and an N type epitaxial layer(1-a), a photodiode(7) on a surface of the N type epitaxial layer, a heavily doped surface P+ layer(8) on the photodiode, a second P well(3) from an upper portion of the N type substrate to a predetermined portion of one side of the N type epitaxial layer, a vertical transfer channel(4) from an upper portion of the second P well to an epitaxial wafer surface of a side portion of the photodiode, a transfer gate(6) between the photodiode and the vertical transfer channel, and a channel stop layer. The channel stop layer(5) is deeply formed from the epitaxial wafer surface to the N type substrate to isolate completely the heavily doped surface P+ layer, the photodiode, the N type epitaxial layer, and one side of the first P well from an adjacent cell.
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