| 摘要 |
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the floating potential across an ion beam used for implantation. The invention provides a ion beam monitoring arrangement comprising a device configured to measure the floating potential of an ion beam when incident thereon, wherein the device is coupled to a substrate support so as to face outwardly in a position so as not to be obscured by a substrate of the contemplated size when held by the substrate holder. Thus, measurements of the floating potential may be taken with a substrate held in place. The ion beam monitoring arrangement may be used to move the device into the ion beam in much the same way as it used to scan a substrate through the ion beam.
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