RESISTANCE CHANGEABLE MEMORY DEVICE AND FORMING THEREOF

摘要

A variable resistance memory device and a forming method thereof is provided to suppress the resistance drift phenomenon of a chalcogen amorphous material by deforming the chalcogen amorphous material. A variable resistance memory device comprises a resistance alteration material in which fluctuation index according to the time of a resistance at a programmed data state is 0.18 or less. The resistance alteration material is a phase change material. The programmed data state is the amorphous state of the phase change material. The carbon or the nitrogen atom is doped in the phase change material. The variable resistance memory device is a multi-level memory device including memory cells having one among a plurality of data states.