| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device which increases a breakdown voltage in the vicinity of a gate electrode, and also to provide a method of manufacturing the same. SOLUTION: The compound semiconductor device includes a SiC substrate 20, an electron transport layer 21 formed on the SiC substrate 20, an electron supply layer 23 formed above the electron transport layer 21, source and drain electrodes 27a and 27b formed on the electron supply layer 23 to be spaced from each other, a protective insulating film 30 which is formed above the electron supply layer 23 between the source and drain electrodes 27a and 27b and which has an opening 29b having a diameter smaller toward the SiC substrate 20, and a gate electrode 32 formed on the electron supply layer 23 within the opening 29b. COPYRIGHT: (C)2009,JPO&INPIT
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