SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor light emitting device and a manufacturing method thereof are provided to improve the property of the emitting device by forming the thin film in which crystalline is high between a substrate and a lower conduction semiconductor layer. A mask seed layer(112) is formed to be random on a substrate(110). A first nitride semiconductor layer(114) is formed on the substrate in which the mask seed layer is not formed and the gap between the mask seed layers. A second nitride semiconductor layer(120) is formed on the upper part of the first nitride semiconductor layer and the upper part of the mask seed layer. A first conductivity semiconductor layer(130) is formed on the second nitride semiconductor layer. An active layer(140) is formed on the first conductivity semiconductor layer. A second conductivity semiconductor layer(150) is formed on the active layer.