| 摘要 |
An ultra high-resolution radiation detector and method for fabrication thereof, has a detector chip, comprising the so-called drift rings and an amplifier integrated with the diode component, centrally located n-type anode on one surface, the depletion region. The detector chip has a circular field of view, the depletion region which also has a circular field of view by ion implanting symmetrical p-n junctions on the surface of the radiation entrance side of the detector chip, said centrally n-type anode located on the opposite surface of the depletion region, and its position is in the region which outer of the depletion region, said centrally n-type anode was surrounded by a plurality of p-type drift electrode rings, which have an gibbous circularity topology; wherein the focus of said p-type drift electrode rings is the position of the anode, said FET (Field-Effect Transistor) was integrated in the position of the detector's anode and directly coupled to the detector's anode. The p-type drift electrode rings is a plurality of drift rings which have gibbous circularity topology, wherein the gibbous circularity topology is encircled by a majority of a large circularity and a small circularity, wherein the maximum of the depletion region is the opposite surface of the region encircled by the outermost p-type drift electrode ring.
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