发明名称 LIGHT EMITTING DIODE CHIP, FABRICATION METHOD THEREOF AND HIGH POWER LIGHT EMITTING DEVICE
摘要 <p>A light emitting diode chip, a fabricating method thereof, and a high output light emitting device are provided to convert the light emitted from a surface by coating a resin layer containing a fluorescent material on a first side of a light emitting diode. A light emitting diode chip(10) has a first side(12a) and a second side(12b) facing each other. A light emitting diode with a first electrode(13a) and a second electrode(13b) is prepared in the first side. A first conductive bump(14a) and a second conductive bump(14b) are formed in the first and second electrodes. The first and second conductive bumps are made of Au or Au alloy. The light emitting diode chip includes a resin layer(18) formed on the whole surface. The part formed in the first side among the resin layer has the thickness smaller than the height of the first and second conductive bumps.</p>
申请公布号 KR20090040770(A) 申请公布日期 2009.04.27
申请号 KR20070106267 申请日期 2007.10.22
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 INOUE TOMIO;YOON, JAE JOON;SHIN, OK HEE
分类号 H01L33/52;H01L33/62 主分类号 H01L33/52
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