发明名称 PLASMA PROCESSING APPARATUS
摘要 The present invention relates to a device for applying process control such as APC or the like. Provided is a plasma processing device having process control technology obtaining a stable processing result. The present invention relates to the plasma processing device capable of processing plasma to a lot which is assembly of a single or plural sample by controlling change of plasma processing with feedback control or feedforward control. A plasma processing controlling device purifies a recovery condition in a processing room of a first lot recovering a state in a processing room in which plasma processing is performed by using standby time from the plasma processing of a second lot in which plasma processing is performed to plasma processing open of the first lot before the first lot in which the plasma processing is performed, and plasma processing contents of the second lot.
申请公布号 KR20160063967(A) 申请公布日期 2016.06.07
申请号 KR20150105988 申请日期 2015.07.27
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KAGOSHIMA AKIRA;SHIRAISHI DAISUKE;NAGATANI YUJI
分类号 H01L21/3065;H01L21/02;H05H1/46 主分类号 H01L21/3065
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