| 发明名称 | Semiconductor device with air gap and method for fabricating the same | ||
| 摘要 | A method for fabricating a semiconductor device includes preparing a substrate which includes a memory cell region and a peripheral circuit region; forming a buried word line in the substrate in the memory cell region; forming a planar gate structure over the substrate in the peripheral circuit region; forming a bit line structure over the substrate in the memory cell region; forming a first air spacers over a sidewalls of the planar gate structure; and forming a second air spacers over a sidewalls of the bit line structure. | ||
| 申请公布号 | US9379004(B1) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201514738421 | 申请日期 | 2015.06.12 |
| 申请人 | SK Hynix Inc. | 发明人 | Kwon Se-Han;Joe Ill-Hee;Park Dae-Sik;Lee Hwa-Chul |
| 分类号 | H01L21/3205;H01L21/4763;H01L21/768;H01L27/105;H01L29/66;H01L27/108 | 主分类号 | H01L21/3205 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor device, comprising: preparing a substrate which includes a memory cell region and a peripheral circuit region; forming a buried word line in the substrate in the memory cell region; forming a planar gate structure over the substrate in the peripheral circuit region; forming a bit line structure over the substrate in the memory cell region; forming a first air spacer over a sidewall of the planar gate structure; and forming a second air spacer over a sidewall of the bit line structure. | ||
| 地址 | Gyeonggi-do KR | ||