THIN FILM TRANSISTOR AND CIRCUIT STRUCTURE

摘要

Disclosed are a thin film transistor and a circuit structure. The thin film transistor comprises a gate, a semiconductor layer (101), an etching stop layer, a source electrode (102) and a drain electrode (103), wherein the source electrode and the drain electrode are connected to the semiconductor layer. The thin film transistor further comprises a stopping structure (104) arranged on the etching stop layer. The stopping structure is electrically isolated from the source electrode and the drain electrode, and the orthographic projection of the stopping structure on the etching stop layer and the orthographic projection of the semiconductor layer on the etching stop layer at least partially overlap. Therefore, the drifting characteristic of the threshold voltage of the thin film transistor is improved.