| 摘要 |
PROBLEM TO BE SOLVED: To provide a polymeric compound, a resin composition for a photoresist, and a method for manufacturing a semiconductor, exhibiting excellent sensitivity and resolution and small line edge roughness (LER), allowing formation of a fine pattern with high accuracy, and capable of reducing generation of development defects.SOLUTION: The polymeric compound includes at least a monomer unit (a) expressed by formula (a) below and a monomer unit (b) including an alicyclic skeleton having a polar group. |
