| 摘要 |
The method includes the steps of forming a metal silicide (2) on the substrate having an oxide film (1), depositing a first thin aluminum film (7) on the silicide (2) to heat-treat and flow the film (7) at 450 deg.C or more, and forming a second thin aluminum film (8) with a low surface reflectivity on the thin film (7) by applying different DC biases to intenal and external targets respectively, thereby flowing the first aluminum film to prevent the disconnection of Al wirings at junction portions.
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