| 摘要 |
1280943 Semi-conductor devices LICENTIA PATENT-VERWALTUNGS GmbH 25 Sept 1970 [27 Sept 1969] 45768/70 Heading H1K A semi-conductor device comprises a monocrystalline semi-conductor body with at least two regions of differing conductivity type, and a passivation layer on its surface, the layer being capable of assuming two different resistivity states. The layer may be of vitreous material, the states being of high resistivity, and low resistivity, both of which states are stable. In an embodiment a silicon body 17, including diffused regions 12, 13, is used to form a transistor, the surface being covered by vapour deposition or cathodic sputtering with a vitreous layer 5 of silicon dioxide, boron trioxide, or phosphorus pentoxide and oxides of copper or tungsten. The layer as formed is in its high resistivity state and is a few microns thick. Contacts are made to the layer over the desied regions of the body, and each junction forwardly biased by voltages at the contacts. When the voltage reaches a threshold value the portion of the layer immediately below the contact changes to its low resistivity state, and the voltage is removed. Low resistance contact is thus made to the body through the layer without windows, and their attendant surface effects, being required in the layer. Prior to being contacted, the layer may act as a diffusion mask. In an alternative embodiment a diode may be formed, one region being diffused or produced by epitaxial growth, the diode being enclosed within a glass envelope. |
