发明名称 LATERAL FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To reduce an on-resistance by not agreeing the direction to connect a drain contact hole with through-hole of an interlayer insulating film for connection of a drain region and with the direction to connect a contact hole for both source and drain regions. CONSTITUTION:The direction of a line passing a drain contact hole 62 with the through-hole of a layered insulating film for connection of drain regions 22, 24 is at an angle to the direction of a line passing a source contact hole 61 and a drain contact hole 62 for respective connection of a source region 23 and the drain regions 22, 24 (For instance, 45 deg. or 30 deg.). For that reason, the limitation of an extent toward the drain region 22, 24 side of a lower wiring 51 connected with a source 23 is reduced and the fining of a device cycle becomes feasible without increasing the resistance of the lower wiring 51. Thereby, the area of a device is reduced, and the increase of the number of an integrated device or the reduction of a lower wiring resistance.
申请公布号 JPH07147401(A) 申请公布日期 1995.06.06
申请号 JP19940022930 申请日期 1994.02.22
申请人 FUJI ELECTRIC CO LTD 发明人 KITAMURA AKIO;FUJISHIMA NAOTO
分类号 H01L23/522;H01L23/528;H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/78 主分类号 H01L23/522
代理机构 代理人
主权项
地址