| 摘要 |
<p>A substrate of esp., silicon is brought into contact with and floated on the surface of a melt of higher specific gravity e.g., Si-Sn or Si- or Sn-Pb from which an epitaxial layer is grown on surface cooling, the melt having been first brought to saturated condition by immersion of a seed crystal. The substrate is prepared by surface etching and held in a Vee shaped lower ended cylindrical jig esp., of quartz. A simple, reproducible method of producing uniform defect free epitaxial growth.</p> |
