| 摘要 |
Extremely thin semiconductor wafers are formed by growing an N-conductivity epitaxial layer on an N<+>-type substrate. A Schottky barrier contact is formed on the epitaxial layer and the assembly is immersed in an appropriate fluid for electrolytic etching. Because of differential etch rates as a function of conductivity, and with an appropriate contact voltage, the substrate is selectively dissolved, leaving only the thin epitaxial layer adhered to the contact. The contact is then removed, leaving the epitaxial layer as an independent ultrathin wafer. |
