METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING HIGH PLANAR JUNCTION BREAKDOWN VOLTAGE

摘要

A body of semiconductor material having first and second opposed faces, and containing a region of N type conductivity and a region of P type conductivity separated by a P-N junction. The N type region contains a central portion extending inward from one face partially through the body toward the second face, and a peripheral portion extending completely through the body with its resistivity increasing toward the second face relative to the remainder of the N type region adjacent the P-N junction. The peripheral portion encloses the P type region and extends the P-N junction to the second face where it has the least chance for voltage breakdown.