| 摘要 |
A method of fabricating a magnetic memory device having spaced, parallel, magnetically coated wires received within tunnels and spaced parallel word conductors crossing the magnetically coated wires at right angles and in close proximity thereto, in which a substrate is formed to have a contoured surface of elongated parallel recesses for receiving the magnetically coated wires and the word conductors are electroplated directly onto the contoured surface of the substrate to follow the shape of the substrate surface. The exposed conductive surfaces of the plated word conductors are then coated with a thin film of insulative material and the completed structure forms one side of the memory that is joined to an identical, similarly formed mating opposite dise.
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