| 摘要 |
<p>PURPOSE:To realize a blue or green semiconductor light emitting element which can operate without heating while exhibiting excellent light and carrier confinement characteristics and can be fabricated easily using a ZnMqSSe based compound conductor as the material of a clad layer. CONSTITUTION:An n-type Zn1-pMgpSqSe1-q clad layer 3, an n-type ZnSe optical waveguide layer 4, an active layer 5, a p-type ZnSe optical waveguide layer 6, a p-type Zn1-pMgpSqSe1-q clad layer 7, a p-type ZnSvSe1-v layer 8 and a p-type ZnSe contact layer 9 are formed sequentially on an n-type GaAs substrate 1 through an n-type ZnSe buffer layer 2. A p-type electrode 11 is formed on the p-type ZnSe contact layer 9 and an n-side electrode 12 is formed on the rear of the n-type GaAs substrate 1 thus constituting a semiconductor light emitting element, e.g. a semiconductor laser or a LED. The active layer 5 is composed of an i-type Zn1-zCdzSe, for example.</p> |
