| 摘要 |
<p>PURPOSE: To permit an illumination such that red, a mixed color or red and blue, red and blue are separately arranged in a planer fashion by injecting light with is emitted for a first layer and a second layer to a sapphire substrate and optically exciting metal ions by such a light to thereby radiate light through transition to a base level. CONSTITUTION: A buffer layer 2 is formed on a sapphire substrate 1, and a high carrier concentration layer 3 and a low carrier concentration layer 4 are stacked on the layer 2, each of the layers 3 and 4 being made of an n-type nitrogen III compound semiconductor. Further, a low carrier concentration layer 51 and a high carrier concentration layer 52 are stacked on the layer 4, each of the layers 51 and 52 being made of a p-type or an i-type nitrogen III compound semiconductor. Light emitted from the n-type and p-type semiconductor layers is injected, so that the light will excite metal ions and radiate light by transition to a base level. As a result, the hue of the radiated light can be changed in a range from red to blue.</p> |
