| 摘要 |
A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high vacuum, and an etching gas is introduced into the chamber to be rendered to a low pressure at which the mean free path of the ions is sufficiently long. The pressure of the etching gas may range from the order of 10-2 Torr to several Torr for etching silicon, using a silicon oxide as a mask material. This method improves the treating accuracy, especially minimizes the amount of side etch, as compared with the conventional plasma etching, and reduces the surface damage when compared with the known ion beam etching.
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