PRODUCTION OF SEMICONDUCTOR

摘要

PURPOSE:To obtain a monocrystaline silicon with a good crystalizing property minimizing defects in the interface with an insulated substrate by annealing with a laser after an amorphous develops near the interface thereof. CONSTITUTION:A silicon ion is implanted near the interface between a sapphire 2 and a silicon 1 of an SOS wafer in which a silicon 1 is grown on a sapphire substrate 2 from the silicon 1 side to form an amorphous region 3. The amount of ion implanted is translated to the amount of the amorphous to be developed near the interface between 1 the silicon 1 and the sapphire 2. A laser beam 20 is irradiated on the SOS wafer from the monocrystaline silicon 1 to effect an annealing. This irradiation of the laser causes a rise in the temperature only near the monocrystaline silicon 1 in the amorphous region 3 whereby a solid phase epitaxial is grown from the silicon single crystal side in the amorphous region 3.