| 摘要 |
<p>PURPOSE:To enable an SF6 gas filled device to be early discovered in its internal abnormality by providing a metal thin film which reacts on cracked SF6 gas of low concentration producing a low conductive fluoride. CONSTITUTION:An internal abnormality detecting element 4A is constituted of a substrate 10 having on its surface many protrusions and hollows of ruggedness from several mum to several tens of mum further being formed by a sintered Al2O3 or the like sintering, for instance, an Al2O3 dust, gold electrode 11 provided in an obverse both side parts of this substrate 10 and a silver thin film 12 provided coating an exposed surface of the substrate 10 and the gold electrode 11. It is most preferable for the silver thin film 12 to form the thickness of 200Angstrom through 400Angstrom . When SF6 gas is dissolved generating inactive cracked gas of SF4 or the like, the cracked gas reacts on water existing in a trace, generating gas of HF or the like. This gas reacts on the silver thin film 12, generating AgF, and the generation of abnormality can be detected by changing a resistance value because a conductive material of silver is denaturalized by a non-conductive material of AgF.</p> |
