| 摘要 |
An integrated circuit comprising complementary field effect transistors which are both of the normally-off depletion type. These transistors have, in the channel region a surface layer which has the same conductivity type as the adjoining source and drain zones. The surface layers comprise, per unit surface area, a quantity of dopant which is at least equal to the charge per unit surface area in the part of the substrate region which adjoins the surface layer and which is depleted if the threshold voltage is applied between the gate electrode and the source and drain zones. The gate electrodes comprise semiconductor material of opposite conductivity types.
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