发明名称 |
SEMICONDUCTOR DEVICE AND ITS MAKING METHOD |
摘要 |
Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effectively serve to minimize interdiffusion during device manufacture without undue increase in electrical contact resistance during device operation. |
申请公布号 |
KR950007351(B1) |
申请公布日期 |
1995.07.10 |
申请号 |
KR19870003318 |
申请日期 |
1987.04.08 |
申请人 |
AT & T COMPANY |
发明人 |
BRASEN, DANIEL;WILLENS, RONALD H. |
分类号 |
H01L29/43;H01L21/28;H01L21/336;H01L21/768;H01L29/45;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/43 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|