发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED DEVICE ISOLATION STRUCTURE AND WIRING STRUCTURE |
摘要 |
A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region. <IMAGE> |
申请公布号 |
KR950007421(B1) |
申请公布日期 |
1995.07.10 |
申请号 |
KR19910009064 |
申请日期 |
1991.05.31 |
申请人 |
CANON CO., LTD. |
发明人 |
ISHIZUKA, KEIJI;KATAOKA, YUZO;ICHISE, TOSHIHIKO;OHZU, HAYAO |
分类号 |
H01L21/74;H01L21/761;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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