发明名称 SEMICONDUCTOR DEVICE WITH IMPROVED DEVICE ISOLATION STRUCTURE AND WIRING STRUCTURE
摘要 A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region. <IMAGE>
申请公布号 KR950007421(B1) 申请公布日期 1995.07.10
申请号 KR19910009064 申请日期 1991.05.31
申请人 CANON CO., LTD. 发明人 ISHIZUKA, KEIJI;KATAOKA, YUZO;ICHISE, TOSHIHIKO;OHZU, HAYAO
分类号 H01L21/74;H01L21/761;(IPC1-7):H01L21/76 主分类号 H01L21/74
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