SOLID STATE IMAGE SENSOR FOR CCD

摘要

The device comprises a semiconductor substrate which consists of a redundant charge emission wall and a p well, a photo receiver which consists of a p type hole integrating layer and an n type photo charge integrating layer on the p-type well, an n-type transfer channel layer which is located on a side of the photo receiver, an n type read channel layer which is formed between the hole integrating layer and the photo charge integrating layer, and between the photo receiver and the n type transfer channel layer, and a transfer gate which is shaped on the n-type transfer channel layer and n-type read channel layer.