TAB type semiconductor device and method of manufacturing the same

摘要

This invention provides a TAB type semiconductor device in which a plurality of lead pattern regions are formed on a film-like tape formed of an insulating resin, and LSI chips are inner lead-bonded onto the corresponding lead pattern regions. A linear reference potential supply wiring pattern is formed on one edge portion in the widthwise direction of a formation surface of the lead pattern regions on the tape to extend in the tape extending direction. The wiring pattern is electrically connected to a reference potential supply lead (14A) of each lead pattern region.