发明名称 |
Method of fabricating integrated resistors in high density substrates |
摘要 |
A process for fabricating integrated resistors in high density interconnect substrates for multi-chip modules. In addition, the resistor material can be converted selectively into an insulator for optionally allowing for the simultaneous fabrication of integrated resistors and capacitors in relatively few steps. The process is well suited for copper/polyimide substrates.
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申请公布号 |
US5254493(A) |
申请公布日期 |
1993.10.19 |
申请号 |
US19920841311 |
申请日期 |
1992.02.24 |
申请人 |
MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION |
发明人 |
KUMAR, NALIN |
分类号 |
H05K1/16;H05K3/06;H05K3/46;(IPC1-7):H01L21/70 |
主分类号 |
H05K1/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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