发明名称 Method of fabricating integrated resistors in high density substrates
摘要 A process for fabricating integrated resistors in high density interconnect substrates for multi-chip modules. In addition, the resistor material can be converted selectively into an insulator for optionally allowing for the simultaneous fabrication of integrated resistors and capacitors in relatively few steps. The process is well suited for copper/polyimide substrates.
申请公布号 US5254493(A) 申请公布日期 1993.10.19
申请号 US19920841311 申请日期 1992.02.24
申请人 MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION 发明人 KUMAR, NALIN
分类号 H05K1/16;H05K3/06;H05K3/46;(IPC1-7):H01L21/70 主分类号 H05K1/16
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