Semiconductor structure and its prepn.

摘要

Semiconductor appts. has a connecting layer (6) on a semiconductor substrate (1) and having a pattern of graduated regions. An insulating Si type film (7) covers the connecting layer, with its surface showing reserved zones above the parts between the graduated regions of the pattern. A silicone ladder-type resin film (8) is used to equalise the depressions in the surface of the insulating film. An uninterrupted hole (7c) in the insulating film exposes the surface of the connecting layer. An upper conducting layer (22) is provided on the insulating film and is electrically connected to the lower connecting layer through the hole. The ladder-type resin is of formula (I), where R1 = at least one of phenyl or lower alkyl; R2 = at least one of H or lower alkyl; and n = 20-1000.