发明名称 |
MANUFACTURE OF A CATHODE IN A FINE VACUUM DEVICE |
摘要 |
A method of fabricating a fine vacuum device having the cathode for emitting electrons includes the steps of depositing polysilicon 2 on a substrate 1 using low pressure chemical vapor deposition, the polysilicon 2 being configured of fine crystal of single-crystalline silicon and amorphous silicon between the fine crystals, the fine crystal of the surface of the polysilicon being buried with the amorphous silicon or a part of the surface being exposed, etching the surface of the polysilicon 2 without using a separate mask to allow the amorphous silicon to be etched faster than the single-crystalline silicon constructing the fine crystal, thereby projecting the single-crystalline silicon, forming a photoresist mask on the polysilicon 2 to expose it, removing the exposed portion of the polysilicon to expose the substrate 1, to form a plurality of divided regions 3 in parallel.
|
申请公布号 |
KR970011489(B1) |
申请公布日期 |
1997.07.11 |
申请号 |
KR19920025022 |
申请日期 |
1992.12.22 |
申请人 |
KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
AHN, KEUN-YOUNG;KANG, WON-KOO;KANG, SUNG-WON |
分类号 |
H01J9/02;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|