发明名称 MANUFACTURE OF A CATHODE IN A FINE VACUUM DEVICE
摘要 A method of fabricating a fine vacuum device having the cathode for emitting electrons includes the steps of depositing polysilicon 2 on a substrate 1 using low pressure chemical vapor deposition, the polysilicon 2 being configured of fine crystal of single-crystalline silicon and amorphous silicon between the fine crystals, the fine crystal of the surface of the polysilicon being buried with the amorphous silicon or a part of the surface being exposed, etching the surface of the polysilicon 2 without using a separate mask to allow the amorphous silicon to be etched faster than the single-crystalline silicon constructing the fine crystal, thereby projecting the single-crystalline silicon, forming a photoresist mask on the polysilicon 2 to expose it, removing the exposed portion of the polysilicon to expose the substrate 1, to form a plurality of divided regions 3 in parallel.
申请公布号 KR970011489(B1) 申请公布日期 1997.07.11
申请号 KR19920025022 申请日期 1992.12.22
申请人 KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 AHN, KEUN-YOUNG;KANG, WON-KOO;KANG, SUNG-WON
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
代理机构 代理人
主权项
地址