| 摘要 |
A microbridge detector is with an active area that is smaller than a pixel collection area of the microbridge detector. The microbridge detector includes a semiconductor substrate on a first level and an microbridge level disposed above the semiconductor substrate. The microbridge level includes the active area having the pixel collection area greater than a square area of the active area of the microbridge detector. In addition, downwardly extending leg portions are a continuation of the microbridge level and support the microbridge level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge level and the semiconductor substrate. Further, electrically conductive paths are included within the downwardly extending leg portions and connect the active area in the microbridge level to the semiconductor substrate. With this apparatus, the microbridge detector is provided with a pixel collecting area that is larger than a fill factor of the microbridge detector and thus is provided with an enhanced optical collection sensitivity. In addition, with this apparatus, the microbridge detector device can be fabricated with a smaller active area without having to build a smaller microbridge level and thus is not limited by processing techniques. |
