| 摘要 |
PROBLEM TO BE SOLVED: To make feasible measuring of the insulation breakdown strength under various conditions, by a method wherein multiple times of protective steps, processing steps and measuring steps are repeated toward a wafer with multiple patterns of semiconductor device wherein a conductive film in a specific times of area ratio of a thin film in a specific thickness is formed. SOLUTION: A field insulation film 2 is selectively formed on the surface of a p type silicon substrate 1 as a base electrode so as to form a 10-300Åthick gate insulation film 3 thinner than the field insulation film 2. Next, a wafer wherein multiple patterns of a semiconductor device forming an upper part electrode 4 as a conductive film in the area ratio of 1 to 10000000 times of the gate insulation film 3 are arranged is prepared. Next, a protective step forming protective films 20a, a processing step by a plasma and a measuring step are repeated so as to make four times of evaluating tests on the same wafer. Through these procedures, the conditions for processing by ions for the tests on the semiconductor device can be pertinently made.
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