发明名称 Silicon semiconductor device with an electrode structure and circuit board having the device mounted thereon
摘要 <p>A circuit board mounted with a semiconductor device is fabricated by forming on a silicon substrate (1) at least one first metal layer (2), overlaying a second metal layer (3) to completely cover the first metal layer, covering the whole surface of the second metal layer with an insulating material (5), etching the insulating material to open a window at a prescribed region of the surface of the second metal layer, selectively imparting adhesiveness (6) to the portion at the window, adhering solder powder (7) to the adhesive portion, melting the solder powder by heating to form a solder bump (8), selectively imparting adhesiveness to at least one electrode portion of a wiring board (11), adhering solder powder to the adhesive portion, melting the adhered solder powder by heating to form a solder bump (13) on the electrode portion, and contacting and fusing the solder bump (8) of the silicon substrate and the solder bump (13) of the wiring board so as to form and maintain a prescribed gap between the silicon substrate and the wiring board. <IMAGE></p>
申请公布号 EP0899786(A2) 申请公布日期 1999.03.03
申请号 EP19980306749 申请日期 1998.08.24
申请人 SHOWA DENKO K K 发明人 SHOJI, TAKASHI;SAKAI, TAKEKAZU
分类号 H01L21/48;H01L21/60;H01L23/485;(IPC1-7):H01L23/485 主分类号 H01L21/48
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