| 摘要 |
A highly heat conductive heat sink comprising diamond particles yet eliminating heat distortion problems caused by the difference in thermal expansion with a semiconductor, and a manufacturing method thereof. Melting of an alloy (C), which comprises a metal (A) of at least one metal selected from the group consisting of Cu, Ag, Au, Al, Mg, and Zn; and a metal (B) of at least one metal selected from the group consisting of the groups 4a and 5a of the Periodic Table and chromium, around diamond particles forms on the surface thereof a metal carbide (B'), which enables the strong bonding between the diamond particles and the metal (A) and thus produces a highly heat conductive heat sink having a much higher thermal conductivity than the metal (A). This structure is attainable by either an infiltration method or sintering method. A special feature, or effectiveness, of the invention lies in that the metal carbide (B') is formed on the surface of the diamond particles at the same time as or after the formation of a metal matrix. It is essential that not less than a quarter of the surface of the diamond particles be covered with the metal carbide (B') and the diamond particles be separated with one another by metal. <IMAGE> |
