发明名称 |
Method of drying semiconductor wafers using hot deionized water and infrared drying |
摘要 |
Methods for drying semiconductor wafers following a chemical cleaning process utilize both a hot deionized water bath and medium-wavelength infrared light drying techniques. A preferred method comprises the steps of (a) maintaining a body of hot deionized water in a bath; (b) submerging multiple wafers to be dried in the body of hot deionized water in said bath; (c) slowly pushing said multiple wafers up through the surface of the body of hot deionized water in said bath; (d) providing an infrared bath containing an infrared lamp; and (e) transferring said multiple wafers to said infrared bath for drying.
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申请公布号 |
US5983907(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19970906417 |
申请日期 |
1997.08.05 |
申请人 |
SEH AMERICA, INC. |
发明人 |
DANH, JACLYN N.;NAKANO, MASAMI |
分类号 |
H01L21/306;(IPC1-7):B02B6/00;C25F1/00;C25F3/30;C25F5/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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