MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to reduce the loss of a plug of a charge storage electrode contact hole by performing an over etching process after preparing a conductive layer to compensate for the loss. CONSTITUTION: An interlayer dielectric(20) for partially exposing a semiconductor substrate(10) is formed by forming a contact hole. A conductive layer for burying the contact hole is formed on an upper portion of the interlayer dielectric(20). Then, the conductive layer is etched such that a protruded shape is formed only in the upper portion of the contact hole. A plug(30b) is formed in a conductive layer wiring and in the contact hole by performing an etching process with respect to the conductive layer using a bit line forming mask. The conductive layer includes a polycide layer.