| 摘要 |
PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to improve the reliability of semiconductor device by preventing copper of a copper wiring from diffusing. CONSTITUTION: A field oxide layer(12) and a gate electrode(13) are formed on a semiconductor substrate(11). An interlayer dielectric(14) is then coated on the semiconductor substrate(11). Then, the first mask pattern is formed to open a metal wiring area and a metal contact area. The interlayer dielectric(14) is etched so that a contact hole is formed in the opened metal contact area and a recess is formed in the metal wiring area. Then, the first mask pattern is removed. The first thin film is formed on a resulted structure. After forming the second mask pattern for covering the metal wiring area and the metal contact area, the first thin film is etched. Then, the second mask pattern is removed. A metal layer is formed on the first thin film.
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