METHOD FOR PREVENTING AN OUT DIFFUSION OF DOPANT IN AN ULTRA SHALLOW JUNCTION

摘要

PURPOSE: An ultra shallow junction film preparing method is provided to obtain a high quality ultra shallow junction by preventing the increase of surface resistance of the junction. CONSTITUTION: Dopant is selectively implanted on a semiconductor plate(21). The dopant is activated with a thermal process having temperature-rising interval, temperature-maintaining interval and a temperature-declining interval. A nitride film(28) is formed on the surface of a region doped with the dopant during the temperature-declining interval in order to prevent out diffusion of the dopant. The dopant is activated simply by changing atmospheric gas during the temperature-declining interval.