| 摘要 |
PURPOSE: A crystal growing part is provided, which uniformly and reproducibly forms a growing layer in a liquid phase epitaxial apparatus, and a two-phase solution technique is provided, which forms a reproducible growing layer by properly controlling a degree of supersaturation. CONSTITUTION: The crystal growing part of a liquid phase epitaxial (LPE) apparatus has a structure in which a MQW (multi-quantum wall) layer is formed by contacting a growing solution contained in a solution holder (14) with the surface of a substrate put on a substrate holder (12) of the crystal growing part. The two-phase solution technique comprises the processes of putting a solution into a solution holder, wherein the crystal growing part comprises a solution holder (14) and a substrate holder, and wherein necessary solutes (InP, InAs, GaAs) are melted into an In solvent in a crystal growing part built-in quartz tube (16); and contacting the growing solution with an In substrate put on a substrate holder (12) which is slipped at the lower part of the solution holder (14) at a crystal growing temperature after floating an InP seed in the solid phase into the solution holder so that a quaternary compound by liquid phase epitaxy, In1-xGaxAsyP1-y growing layer is lattice-matched on a substrate according to a certain composition ratio (x,y).
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