| 摘要 |
Light emitting semiconductor device production, comprising growing a highly lattice mismatched layer on an upper cladding layer at a specified low initial growth rate, is new. Production of a light emitting semiconductor device, having a light emitting region, comprising a lower cladding layer, an active layer and an upper cladding layer formed on a compound semiconductor substrate, and an overlying grown layer, comprises adjusting at least the initial growth rate to /}1.0 mu /hr., when the layer is grown from a crystal interface on the upper cladding layer such that the crystal composition at the upper cladding layer changes to a lattice mismatch state, in which the absolute value of the lattice matching factor DELTA a/a is ( 0.25% between the leading and trailing crystals of the crystal interface. Preferred Features: The upper cladding layer consists of (AlxGa1-x)yIn1-yP (x = 0 to 1 and y = 0 to 1) and the grown layer is a current diffusion layer or current stopping layer of the same material or of GaP.
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