| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory which can read out stably a ROM even when a power-on detecting level is set to a low level. SOLUTION: This device is provided with a memory cell array 1 in which memory cells storing fuse data are arranged, a register 8 for fuse storing fuse data read out from the memory cell and a reference voltage circuit 9 consisting of a differential amplifier for generating reference voltage. Power source voltage of the reference voltage circuit 9 is boosted by a boosting circuit 12 for the reference voltage circuit/the differential amplifier during a read-out operation in which fuse data is read out from the memory cell.</p> |
