发明名称 OPENING PATTERN FORMING METHOD AND MANUFACTURING METHOD OF MATRIX SUBSTRATE USING IT
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem where the application frequencies required in photolithography is generally 5-6 times across the entire process, resulting in a longer manufacturing process, since a contact hole is formed at an inter-layer insulating film between two wiring layers by a photolithography technology to connect the lower-layer wiring to the upper-layer wiring in the process for manufacturing a TFT array. SOLUTION: A lower-layer wiring 2 is formed on a substrate 1 on which an inter-layer insulating film 3 and an upper-layer metal film 4 are sequentially deposited. An opening 5 is formed at the upper-layer metal film 4 by laser beam. With the upper-layer metal film 4 formed at the opening 5 as a mask, the inter-layer insulating film 3 left at the opening 5 is removed. Thus, a photolithography process for forming a contact hole is omitted for shorter manufacturing process.</p>
申请公布号 JP2002158282(A) 申请公布日期 2002.05.31
申请号 JP20000354923 申请日期 2000.11.21
申请人 NEC KAGOSHIMA LTD 发明人 SAKUMICHI NORIHIRO
分类号 G02F1/1368;H01L21/336;H01L21/768;H01L29/786;(IPC1-7):H01L21/768;G02F1/136 主分类号 G02F1/1368
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