发明名称 |
METHOD FOR POLISHING SEMICONDUCTOR WAFER |
摘要 |
PURPOSE: A method for cleaning slurry residues generated on a polishing pad after the completion of a CMP process is provided to easily clean and to minimize contamination by using two slurry materials. CONSTITUTION: In the method for polishing a semiconductor wafer temporarily mounted on a carrier, a surface of the wafer on a first pad on a first polish table is roughly polished by using a first slurry solution. Then, the wafer is removed from the first polish table. The first pad is rinsed with a cleaning fluid. The wafer and carrier are rinsed with a second fluid. The wafer surface is then secondly polished with a second slurry solution. Then, the wafer, the carrier and the pad are simultaneously rinsed that the second polishing is performed on with a third fluid while the wafer surface remains in contact with the pad by applying low pressure force between the wafer surface and the pad to complete the second polish step.
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申请公布号 |
KR20020039606(A) |
申请公布日期 |
2002.05.27 |
申请号 |
KR20010069675 |
申请日期 |
2001.11.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION. |
发明人 |
HUYNH CUC K.;MANFREDI PAUL A.;MARTIN THOMAS J.;NADEAU DOUGLAS P. |
分类号 |
H01L21/302;B24B37/04;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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