ELECTRONIC DEVICE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND THIN-FILM PIEZOELECTRIC ELEMENT USING IT

摘要

PROBLEM TO BE SOLVED: To provide an electronic device wherein the tensile stress applied on a ferroelectric thin film from a semiconductor device is relaxed by a simple method. SOLUTION: An electronic device substrate is provided which comprises a lower part electrode 5 of an epitaxial film formed on a semiconductor substrate 3, a ferroelectric layer 6 of an epitaxial film formed on the lower part electrode 5, and an upper part electrode 7 formed on the ferroelectrics layer 6. The film-thickness of the lower part electrode 5 is set to 200-1000 nm. Thus, the tensile stress applied on the ferroelectrics thin-film 6 from the semiconductor substrate 3 is relaxed, raising the ratio of c-domain of the ferroelectrics thin-film 6.