METHOD OF FORMING A METAL WIRING IN A SEMICONDUCTOR DEVICE

摘要

A method for forming a metal interconnection in a semiconductor device is provided to avoid an increase of contact resistance and solve a problem arising in a process for forming a metal seed after a barrier metal layer is formed by eliminating an oxide material absorbed to the surface of the barrier metal layer in a reductive gas atmosphere before a metal seed layer is formed. A semiconductor substrate(101) having a lower metal interconnection(103) is prepared. After an interlayer dielectric is formed on the resultant structure, a dual damascene pattern(106) is formed to expose the lower metal interconnection. A barrier metal layer(107) is formed on the resultant structure including the dual damascene pattern. The oxide on the surface of the barrier metal layer is removed in a reductive gas atmosphere. An upper metal interconnection(109) is formed on the dual damascene pattern by an in-situ process.