发明名称 |
Interdigitated capacitor and method for fabrication thereof |
摘要 |
A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.
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申请公布号 |
US7035083(B2) |
申请公布日期 |
2006.04.25 |
申请号 |
US20040804899 |
申请日期 |
2004.03.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
LIN WEN-CHIN;TANG DENNY;LAI LI-SHYUE;CHANG CHUNG-LONG;CHEN CHUN-HON |
分类号 |
H01G4/06;H01L23/522;H01P1/36 |
主分类号 |
H01G4/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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