| 摘要 |
PROBLEM TO BE SOLVED: To increase further a stress impressed on a channel region and realize the further improvement of operating characteristics, in a p-channel MOS transistor capable of improving an operating speed, by impressing a compressive stress on a silicon substrate in the channel region in the channel direction thereof employing an SiGe mixed crystalline layer region grown through epitaxial growth on the silicon substrate, as the source of the stress. SOLUTION: A compressive stress film is impressed on the p-type SiGe mixed crystalline layer region formed so as to be opposed to the source/drain region of the p-channel MOS transistor, and the p-type SiGe mixed crystalline layer region is compressed into a direction orthogonal to the channel direction on the surface of a silicon substrate to expand the same into the channel direction. Consequently, the compressive stress is increased as impressed on a region immediately below the channel region. COPYRIGHT: (C)2006,JPO&NCIPI
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